Electron-phonon coupling effects on the van Hove singularity in topological crystalline insulators

Doan Quoc Khoa, Nguyen Tien Dung, Tran Tien, Bui Dinh Hoi
Author affiliations

Authors

  • Doan Quoc Khoa The University of Danang- University of Science and Technology, Da Nang 550000, Vietnam
  • Nguyen Tien Dung School of Engineering and Technology, Vinh University, 182 Le Duan street, Vinh City, Nghe An province, Vietnam
  • Tran Tien University of Medicine and Pharmacy, Hue University, Hue 530000, Vietnam
  • Bui Dinh Hoi Faculty of Physics, University of Education, Hue University, Hue 530000, Vietnam https://orcid.org/0000-0002-5174-841X

DOI:

https://doi.org/10.15625/0868-3166/22638

Keywords:

Electronic band structure, electron-phonon interaction, van Hove singularity, topological insulator Density of States

Abstract

In this study, we examine the influence of electron–phonon coupling (EPC) on the van Hove singularities on the SnTe(001) surface as a topological crystalline insulator. To do this, we calculate the electronic density of states (DOS) and investigate its changes according to the parameters characteristic of the EPC. The effect of EPC is incorporated in the modified momentum (wave number) components along the x – and y – directions. The results show that when varying the EPC strength along the x – direction (λx), the number and position of the Van Hove singularities remain unchanged, but their height decreases significantly. As λx is sufficiently large, these singularities vanish, and an energy gap emerges. In contrast, when the EPC strength λy is altered within a range similar to λx, the change in DOS is nearly negligible, and a significant EPC is required to observe any small changes. The difference in the DOS changes with respect to EPC strength between the x- and y-directions highlights the anisotropy of the SnTe(001) surface. The findings indicate that the electronic characteristics of the SnTe(001) surface can be tuned through EPC by modifying factors influencing crystal lattice vibrations, such as temperature or substrate material.

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Published

29-05-2025

How to Cite

[1]
Q. K. Doan, T. D. Nguyen, T. Tran, and D. H. Bui, “Electron-phonon coupling effects on the van Hove singularity in topological crystalline insulators”, Comm. Phys., vol. 35, no. 2, p. 133, May 2025.

Issue

Vol. 35 No. 2 (2025)

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Papers

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