On Rydberg excitons in two-dimensional semiconductors

Ngoc Cam Hoang; Nhu Dat Nguyen; Thi Man Duong; Thi Bich Thao Pham; Hieu Nguyen-Truong

doi:10.15625/0868-3166/23107

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Authors

Hoang Ngoc Cam Institute of Physics, Vietnam Academy of Science and Technology
Nguyen Nhu Dat Institute of Physics, Vietnam Academy of Science and Technology https://orcid.org/0000-0002-7421-7224
Duong Thi Man Institute of Physics, Vietnam Academy of Science and Technology
Pham Thi Bich Thao Can Tho University https://orcid.org/0000-0002-2290-9528
H. T. Nguyen-Truong Van Lang University https://orcid.org/0000-0002-1609-5206

DOI:

https://doi.org/10.15625/0868-3166/23107

Abstract

We study Rydberg excitons in two-dimensional transition-metal dichalcogenide semiconductors, using the Rytova-Keldysh potential to account for nonlocal dielectric screening effects. We determine exciton binding energies in monolayer WSe\(_2\) and WS\(_2\) by the variational method. We perform calculations for different dielectric environments (isolation, hBN encapsulation, and SiO\(_2\) substrate support) to investigate the influences of the surrounding dielectric environment. Our theoretical results agree reasonably with experimental measurements and previous numerical calculations. The study shows a strong dependence of exciton binding energy and spatial extent on both the principal and angular quantum numbers, as well as on the surrounding dielectric environment.

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On Rydberg excitons in two-dimensional semiconductors

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