Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects
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DOI:
https://doi.org/10.15625/0868-3166/30/2/14446Keywords:
Magnetoresistance, Exchange-correlation effects, Metal–insulator transitionAbstract
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.Downloads
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Published
26-05-2020
How to Cite
[1]
V. T. Truong, Q. K. Nguyen, V. T. Vo, and K. L. Dang, “Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects”, Comm. Phys., vol. 30, no. 2, p. 123, May 2020.
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