The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method

Tran Thi Hai, Nguyen Trung Hong, Nguyen Huyen Tung, Doan Nhat Quang
Author affiliations

Authors

  • Tran Thi Hai Department of Engineering and Technology, Hong Duc University
  • Nguyen Trung Hong Institute of Engineering Physics, Hanoi University<br /> of Technology
  • Nguyen Huyen Tung Institute of Engineering Physics, Hanoi University<br /> of Technology
  • Doan Nhat Quang Center for Theoretical Physics, Institute of Physics, VAST

DOI:

https://doi.org/10.15625/0868-3166/20/4/2528

Abstract

We employ the theory of band-bending effects to explain the channel-width dependence of the mobility of a two-dimentional hole gas (2DHG) in narrow square Si/Si\(_{1-x}\)Ge\(_x\)/Si quantum well at high Ge content. The numerical calculation of scattering mechanisms is shown in comparison with the ones from the previous computations. Our method enables a better quantitative description of recently measured data about the dependence of the 8 K mobility of holes in a Si/Si\(_{0.2}\)Ge\(_{0.8}\)/Si quantum well on the channel width varying from 25 - 70Å

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Published

01-11-2012

How to Cite

[1]
T. T. Hai, N. T. Hong, N. H. Tung, and D. N. Quang, “The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method”, Comm. Phys., vol. 20, no. 4, p. 319, Nov. 2012.

Issue

Vol. 20 No. 4 (2010)

Section

Papers

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